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Design and Analysis of P-GaN based ß - Ga,O3 FET on wide band gap substrates

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Departmnent of Electronics and Communication Engineering Dr. B. R. Ambedkar National Institute of Technology Jalandhar - 144008, Punjab (India) 2023Description: 68pDDC classification:
  • 621
Dissertation note: THIS THESIS BELONGS TO DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
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Thesis & Dissertations Central Library, NIT Jalandhar Central Library, NIT Jalandhar Reference Available ETS/ECE/2023/193

THIS THESIS BELONGS TO DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

MTECH 21204110

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