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Design and Analysis of P-GaN based ß - Ga,O3 FET on wide band gap substrates

PANGA RAVENDRA

Design and Analysis of P-GaN based ß - Ga,O3 FET on wide band gap substrates - Departmnent of Electronics and Communication Engineering Dr. B. R. Ambedkar National Institute of Technology Jalandhar - 144008, Punjab (India) 2023 - 68p

THIS THESIS BELONGS TO DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

Dewey Class. No.: 621

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