| 000 | 00674nam a22001817a 4500 | ||
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| 005 | 20230908105623.0 | ||
| 008 | 230908b |||||||| |||| 00| 0 eng d | ||
| 041 | _aeng | ||
| 082 | _a621 | ||
| 100 |
_aPANGA RAVENDRA _931047 |
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| 245 | _aDesign and Analysis of P-GaN based ß - Ga,O3 FET on wide band gap substrates | ||
| 260 |
_bDepartmnent of Electronics and Communication Engineering Dr. B. R. Ambedkar National Institute of Technology Jalandhar - 144008, Punjab (India) _c2023 |
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| 300 | _a68p | ||
| 502 | _aTHIS THESIS BELONGS TO DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING | ||
| 526 |
_aMTECH _b21204110 |
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| 700 | _eAshish Raman | ||
| 942 | _cTH | ||
| 999 |
_c198603 _d198603 |
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