PANGA RAVENDRA <br/><br/>
Design and Analysis of P-GaN based ß - Ga,O3  FET on wide band gap substrates 

 -  Departmnent of Electronics and Communication Engineering Dr. B. R. Ambedkar National Institute of Technology  Jalandhar - 144008, Punjab (India)  2023 
 - 68p 
<br/><br/>THIS THESIS BELONGS TO DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING 
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<br/><br/><label>Dewey Class. No.: </label>621