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Performance And Investigation of Normally-Off Extended Gate AlGa2O3/Ga2O3 HEMT

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Department Of Electronics and Communication Engineering Dr B.R. Ambedkar National Institute of Technology Jalandhar 144088 (India) 2023Description: 80pDDC classification:
  • 621
Dissertation note: THIS THESIS BELONGS TO DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
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Thesis & Dissertations Central Library, NIT Jalandhar Central Library, NIT Jalandhar Reference Available ETS/ECE/2023/177

THIS THESIS BELONGS TO DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

MTECH 21904119

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